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HIVE INF
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RMATI
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ARCHIVE INFORMATION
MRF6P3300HR3 MRF6P3300HR5
5
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc)
-25
-10
-20
900
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier OFDM Broadband Performance @ 60 Watts Avg.
890
880
870
860
850
840
830
21
20
-65
31
27
-50
-55
-60
η
D
, DRAIN
EFFICIENCY (%)
ηD
18.5
18
17.5
17
20.5
19.5
19
29
25
-45 -5
-15
VDD= 32 Vdc, Pout
= 60 W (Avg.)
IDQ
= 1600 mA, 8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc)
-25
-10
-20
900
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier OFDM Broadband Performance @ 120 Watts Avg.
890
880
870
860
850
840
830
21
VDD= 32 Vdc, Pout
= 120 W (Avg.)
IDQ
= 1600 mA, 8K Mode OFDM
64 QAM Data Carrier
20
Modulation, 5 Symbols
-53
44
40
-47
-49
-51
η
D
, DRAIN
EFFICIENCY (%)
ηD
18.5
18
17.5
17
20.5
19.5
19
42
38
-45 -5
-15
Figure 5. Two-T one Power Gain versus
Output Power
17.5
21.5
5
IDQ
= 800 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
21
20
19
100 600
G
ps
, POWER GAIN (dB)
18
1600 mA
20.5
19.5
18.5
10
1200 mA
2400 mA
VDD
= 32 Vdc
f1 = 857 MHz, f2 = 863 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
-20
-30
-40
-50
-60
10
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
-10
IDQ
= 2400 mA
800 mA
2000 mA
1200 mA
1600 mA
VDD
= 32 Vdc, f1 = 857 MHz, f2 = 863 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
600
5
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